MOSFET scaling and miniaturization has been driving the rapid exponential growth of electronic semiconductor technology since the 1960s, and enables high-density ICs such as memory chips and microprocessors. It is a compact transistor that has been miniaturised and mass-produced for a wide range of applications, revolutionizing the electronics industry and the world economy, and being central to the digital revolution, silicon age and information age. It is the dominant semiconductor device in digital and analog integrated circuits (ICs), and the most common power device. It is the basic building block of modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion ( 1.3 ×10 22) MOSFETs manufactured between 19. Atalla and Dawon Kahng at Bell Labs in 1959, and first presented in 1960. The voltage of the covered gate determines the electrical conductivity of the device this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. ![]() ![]() The metal–oxide–semiconductor field-effect transistor ( MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor ( MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon. Heat sink and a discrete MOSFET transistor
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